GROWTH OPTIMIZATION AND PROCESS DEVELOPMENT OF INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE SOLAR CELLS

Abstract : Chapter one is an introductory chapter defining some basic physics that are important to solar cells as well an introduction to the economic pressures driving solar cell innovation and the state of the art for various types of solar cells. Chapter two deals with the material indium gallium nitride. The material prop erties are discussed followed by a discussion of InGaN solar cells. We discuss our laboratory’s approach to InGaN solar cells, namely optimizations of the semibulk growth method. We also demonstrate how semibulk InGaN can be used to produce a very high quality solar cell absorber resulting in a high short circuit current. Through this process we found that we may be able to improve the solar cell by optimizing the processing. Lastly we discuss simulations performed on InGaN/Si tandem solar cells and show that this is a promising route to high eciency solar cells. In order to decouple the material quality from the device processing and focus on optimizing the solar cell process we use LED samples. We then deconstruct each step of the process and describe the steps we used to optimize them in chapter three. Specifically we discuss: • Device Design • GaN Etching • V-Pits – How they e↵ect solar cell performance and how to passivate them • Metal contacting to n-GaN – Materials, Improving the specific contact resistance, and yield • Metal contacting to p-GaN – The transport mechanisms associated with the contacts, various studies optimizing the contact, and the measured e↵ect of the contact on the electrical performance. • Passivation of the mesa • And the next steps – Chiefly investigating the p-contact’s optical properties, other p-contact materials, passivation, and antireflective coatings In this chapter we present device results from LEDs. These LEDs were also characterized as solar cells and used in and InGaN/Si solar cell tandem. We discuss alternative paths to high eciency InGaN based solar cells and demonstrate InGaN based solar cells grown on BN as well and nanoselective area growth solar cells. Finally in the last chapter we conclude by briefly recapping the work that has been done as well as what is left to be done to achieve high eciency InGaN/Si tandem solar cells.
Keywords : Nitride
Document type :
Theses
Complete list of metadatas

Cited literature [160 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/tel-02433343
Contributor : Nadege Dastillung <>
Submitted on : Thursday, January 9, 2020 - 9:17:48 AM
Last modification on : Saturday, January 11, 2020 - 1:23:58 AM

File

jordan matthew.pdf
Files produced by the author(s)

Identifiers

  • HAL Id : tel-02433343, version 1

Citation

Matthew Jordan. GROWTH OPTIMIZATION AND PROCESS DEVELOPMENT OF INDIUM GALLIUM NITRIDE/GALLIUM NITRIDE SOLAR CELLS. Engineering Sciences [physics]. École Doctorale de génie électrique et informatique, 2017. English. ⟨tel-02433343⟩

Share

Metrics

Record views

46

Files downloads

19